International Business Machines Assigned Patent for Method of Patterning Semiconductor Structure and Structure
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Feb. 2 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,362,531) developed by Thomas W. Dyer, Pleasant Valley, N.Y., and James J. Toomey, Poughkeepsie, N.Y., for a "method of patterning semiconductor structure and structure thereof."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Method of patterning a semiconductor structure is disclosed. The method involves crystallographic etching techniques to enhance a patterned monocrystalline layer as a hard mask. In one embodiment, the method includes bonding a monocrystalline silicon layer to a non-crystalline protective layer; patterning the monocrystalline layer to form a hard mask; enhancing the pattern of the hard mask; stripping the hard mask after conventional etching of protective layer; and forming a gate oxide thereon. The enhanced patterning of the hard mask is performed with crystallographic etching to replace optical effects of rounding and dimension narrowing at the ends of a defined region with straight edges and sharp corners. A resulting structure from the use of the enhanced patterned hard mask includes a layer of composite materials on the substrate of the semiconductor structure. The layer of composite materials includes different materials in discrete blocks defined by straight edges within the layer."
The patent application was filed on May 5, 2011 (13/102,007). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,362,531&OS=8,362,531&RS=8,362,531
Written by Arpi Sharma; edited by Anand Kumar.
(c) 2013 Targeted News Service
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