RDA Microelectronics has unveiled its RDA6821 and RDA6822 High Band WCDMA PA products for Band 1 (2100 MHz) and Band 2 (1900 MHz) applications. The company now provides a complete 3G WCDMA PA product offering for emerging markets.
The power amplifiers are built on proven GaAs HBT, which provides superior performance for medium- and high-power modes, as well as SOI CMOS process technology that offers integrated switching capabilities, excellent low-power performance and an additional bypass option.
These technologies enable the amplifiers at the highest level of efficiency and linearity.
Customer’s opting for the new RDA products will have the additional benefit of saving cost as the product has a unique process architecture combined with an innovative two-layer substrate solution. The amplifiers are packaged in a small 3mm x 3mm form factor and pin-compatible with all industry standard counterparts.
Vincent Tai, chairman and CEO at RDA Microelectronics, said, “Our latest offering of High Band WCDMA PAs provides RDA a complete solution for emerging market handsets, which is part of our broader strategy to expand our product lines and diversify our 3G solutions. RDA's offering provides customers high performance, low power solutions at a cost-effective price point. We are excited to begin sampling these solutions to our customers and demonstrating the value of these products for the rapidly growing 3G market.”
RDA Microelectronics was in the news recently, having announced that the company Chairman and CEO, Vincent Tai, would participate at the 15 Annual Needham Growth Conference to be held at the New York Palace Hotel in New York, NY. Tai is scheduled to present on Wednesday, January 16, 2013 at 1:30 p.m. EST.
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Edited by Braden Becker