Micron Technology Assigned Patent for Methods of Forming Diodes
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Jan. 5 -- Micron Technology, Boise, Idaho, has been assigned a patent (8,343,828) developed by Gurtej Sandhu, Boise, Idaho, and Bhaskar Srinivasan, Boise, Idaho, for "methods of forming diodes."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along opposing sidewalls of the stack, and then an entirety of the sacrificial material may be removed to leave a gap between the first conductive material and the at least one dielectric material. In some embodiments of forming diodes, a layer may be formed over a first conductive material, with the layer containing supports interspersed in sacrificial material. At least one dielectric material may be formed over the layer, and a second conductive material may be formed over the at least one dielectric material. An entirety of the sacrificial material may then be removed."
The patent application was filed on Nov. 28, 2011 (13/305,072). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,828&OS=8,343,828&RS=8,343,828
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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