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Dow Corning Assigned Patent for Method of Reducing Memory Effects in Semiconductor Epitaxy
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Jan. 5 -- Dow Corning, Midland, Mich., has been assigned a patent (8,343,854) developed by Mark Loboda, Bay City, Mich., for "method of reducing memory effects in semiconductor epitaxy."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of reducing memory effects during an epitaxial growth process is provided in which a gas mixture comprising hydrogen gas and a halogen-containing gas is used to flush the CVD reaction chamber between growth steps."
The patent application was filed on May 29, 2009 (12/993,938). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,854&OS=8,343,854&RS=8,343,854
Written by Satyaban Rath; edited by Hemanta Panigrahi.
SR0105HP0105-827582
(c) 2013 Targeted News Service
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