International Business Machines Assigned Patent for Reducing Dislocation Formation in Semiconductor Devices Through Targeted Carbon Implantation
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,343,825) developed by five co-inventors for a "reducing dislocation formation in semiconductor devices through targeted carbon implantation." The co-inventors are Anthony G. Domenicucci, New Paltz, N.Y., Shreesh Narasimha, Beacon, N.Y., Karen A. Nummy, Newburgh, N.Y., Viorel C. Ontalus, Danbury, Conn., and Yun-Yu Wang, Poughquag, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of forming a semiconductor device includes implanting an amorphizing species into a crystalline semiconductor substrate, the substrate having a transistor gate structure formed thereupon. Carbon is implanted into amorphized regions of the substrate, with specific implant conditions tailored such that the peak concentration of carbon species coincides with the end of the stacking faults, where the stacking faults are created during the recrystallization anneal. The implanted carbon pins partial dislocations so as to prevent the dislocations from disassociating from the end of the stacking faults and moving to a region in the substrate directly below the transistor gate structure. This removes the defects, which cause device leakage fail."
The patent application was filed on Jan. 19, 2011 (13/009,020). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,825&OS=8,343,825&RS=8,343,825
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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