International Business Machines Assigned Patent for Method for Forming Retrograded Well for MOSFET
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,343,818) developed by four co-inventors for a "method for forming retrograded well for MOSFET." The co-inventors are Huilong Zhu, Poughkeepsie, N.Y., Zhijiong Luo, Beijing, Qingqing Liang, Lagrangeville, N.Y., and Haizhou Yin, Poughkeepsie, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of forming an electrical device is provided that includes forming at least one semiconductor device on a first semiconductor layer of the SOI substrate. A handling structure is formed contacting the at least one semiconductor device and the first semiconductor layer. A second semiconductor layer and at least a portion of the dielectric layer of the SOI substrate are removed to provide a substantially exposed surface of the first semiconductor layer. A retrograded well may be formed by implanting dopant through the substantially exposed surface of the first semiconductor layer into a first thickness of the semiconductor layer that extends from the substantially exposed surface of the semiconductor layer, wherein a remaining thickness of the semiconductor layer is substantially free of the retrograded well dopant. The retrograded well may be laser annealed."
The patent application was filed on Jan. 14, 2010 (12/687,287). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,818&OS=8,343,818&RS=8,343,818
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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