Fairchild Semiconductor Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Jan. 5 -- Fairchild Semiconductor, South Portland, Maine, has been assigned a patent (8,343,852) developed by seven co-inventors for a "method and structure for dividing a substrate into individual devices." The co-inventors are Minhua Li, Sandy, Utah, Qi Wang, Sandy, Utah, Gordon Sim, Sandy, Utah, Matthew Reynolds, Sandy, Utah, Suku Kim, South Jordan, Utah, James J. Murphy, South Jordan, Utah, and Hamza Yilmaz, Saratoga, Calif.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies."
The patent application was filed on April 27, 2011 (13/095,584). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,852&OS=8,343,852&RS=8,343,852
Written by Satyaban Rath; edited by Hemanta Panigrahi.
(c) 2013 Targeted News Service
[ Back To Technology News's Homepage ]