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International Rectifier Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Jan. 5 -- International Rectifier, El Segundo, Calif., has been assigned a patent (8,343,856) developed by Robert J. Therrien, Apex, N.C., Jerry W. Johnson, Raleigh, N.C., and Allen W. Hanson, Cary, N.C., for a "method for forming gallium nitride devices with conductive regions."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e.g., a silicon substrate) by a barrier material in order to limit, or prevent, undesirable reactions between the electrically conductive material and the other component(s) which can impair device performance. In certain embodiments, the electrically conductive material may be formed in a via. For example, the via can extend from a topside of the device to a backside so that the electrically conductive material connects a topside contact to a backside contact. The structures described herein may form the basis of a number of semiconductor devices including transistors (e.g., FET), Schottky diodes, light-emitting diodes and laser diodes, amongst others."
The patent application was filed on Nov. 22, 2011 (13/303,075). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,856&OS=8,343,856&RS=8,343,856
Written by Satyaban Rath; edited by Hemanta Panigrahi.
SR0105HP0105-827580
(c) 2013 Targeted News Service
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