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Taiwan Semiconductor Manufacturing Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Jan. 8 -- Taiwan Semiconductor Manufacturing, Hsin-Chu, Taiwan, has been assigned a patent (8,344,355) developed by four co-inventors for a "semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same." The co-inventors are Matthew T. Currie, Brookline, Mass., Anthony J. Lochtefeld, Ipswich, Mass., Richard Hammond, Harriseahead, United Kingdom, and Eugene A. Fitzgerald, Windham, N.H.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or "FETs") that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced."
The patent application was filed on Dec. 15, 2011 (13/327,194). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,344,355.PN.&OS=PN/8,344,355&RS=PN/8,344,355
Written by Kusum Sangma; edited by Anand Kumar.
KS0108AK0108-828642
(c) 2013 Targeted News Service
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