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Furukawa Electric Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Jan. 15 -- Furukawa Electric, Tokyo, has been assigned a patent (8,350,293) developed by five co-inventors for a "field effect transistor and method of manufacturing the same." The co-inventors are Tat-Sing Paul Chow, Troy, N.Y., Takehiko Nomura, Tokyo, Yuki Niiyama, Tokyo, Hiroshi Kambayashi, Tokyo, and Seikoh Yoshida, Tokyo.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A p-type nitride compound semiconductor layer is formed on a buffer formed on a substrate. An n-type contact region is formed by ion implantation under a source electrode and a drain electrode. An electric-field reducing layer made of an n-type nitride compound semiconductor is formed on the p-type nitride compound semiconductor layer. A carrier density of the electric-field reducing layer is lower than that of the n-type contact region. A first end portion of the electric-field reducing layer contacts with the n-type contact region, and a second end portion of the electric-field reducing layer overlaps with a gate electrode."
The patent application was filed on Dec. 29, 2009 (12/648,564). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,350,293.PN.&OS=PN/8,350,293&RS=PN/8,350,293
Written by Kusum Sangma; edited by Anand Kumar.
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(c) 2013 Targeted News Service
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