Apple Assigned Patent for Current Limit Circuit and Semiconductor Memory Device
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Jan. 17 -- Apple, Cupertino, Calif., has been assigned a patent (8,354,877) developed by Shuichi Tsukada, Tokyo, for a "current limit circuit and semiconductor memory device."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A current limit circuit comprising: a current limit element for limiting an output current level to within a predetermined range of a limiting current and including a first PMOS transistor having a source to which a predetermined voltage is applied and a drain through which the output current is supplied; and a gate voltage generating circuit for generating a gate voltage by a feedback control such that a difference between the predetermined voltage and a gate voltage of the first PMOS transistor coincides with a threshold voltage of a second PMOS transistor having approximately the same characteristic as that of the first PMOS transistor in a state in which a predetermined current is flowing through the second PMOS transistor."
The patent application was filed on Oct. 27, 2009 (12/606,756). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,354,877&OS=8,354,877&RS=8,354,877
Written by Arpi Sharma; edited by Anand Kumar.
(c) 2013 Targeted News Service
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