International Business Machines Assigned Patent for Method to Optimize Work Function in Complementary Metal Oxide Semiconductor (CMOS) Structures
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Jan. 21 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,354,313) developed by four co-inventors for a "method to optimize work function in complementary metal oxide semiconductor (CMOS) structures." The co-inventors are Unoh Kwon, Fishkill, N.Y., Dechao Guo, Wappinger Falls, N.Y., Siddarth A. Krishnan, Peekskill, N.Y., and Ramachandran Muralidhar, Mahopac, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "In one embodiment, the method for forming a complementary metal oxide semiconductor (CMOS) device includes providing a semiconductor substrate including a first device region and a second device region. An n-type conductivity semiconductor device is formed in one of the first device region or the second device region using a gate structure first process, in which the n-type conductivity semiconductor device includes a gate structure having an n-type work function metal layer. A p-type conductivity semiconductor device is formed in the other of the first device region or the second device region using a gate structure last process, in which the p-type conductivity semiconductor device includes a gate structure including a p-type work function metal layer."
The patent application was filed on April 30, 2010 (12/770,792). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,354,313.PN.&OS=PN/8,354,313&RS=PN/8,354,313
Written by Kusum Sangma; edited by Anand Kumar.
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