International Business Machines Assigned Patent for Silicon Germanium Film Formation Method and Structure
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Jan. 21 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,354,314) developed by Ashima B. Chakravarti, Hopewell Junction, N.Y., Abhishek Dube, Fishkill, N.Y., and Dominic J. Schepis, Wappingers Falls, N.Y., for a "silicon germanium film formation method and structure."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Epitaxial deposition of silicon germanium in a semiconductor device is achieved without using masks. Nucleation delays induced by interactions with dopants present before deposition of the silicon germanium are used to determine a period over which an exposed substrate surface may be subjected to epitaxial deposition to form a layer of SiGe on desired parts with substantially no deposition on other parts. Dopant concentration may be changed to achieve desired thicknesses within preferred deposition times. Resulting deposited SiGe is substantially devoid of growth edge effects."
The patent application was filed on Feb. 11, 2011 (13/025,474). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,354,314.PN.&OS=PN/8,354,314&RS=PN/8,354,314
Written by Kusum Sangma; edited by Anand Kumar.
(c) 2013 Targeted News Service
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