Institute of Microelectronics Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Jan. 22 -- Institute of Microelectronics, Beijing, has been assigned a patent (8,354,343) developed by Huilong Zhu, Poughkeepsie, N.Y., Haizhou Yin, Poughkeepsie, N.Y., and Zhijiong Luo, Poughkeepsie, N.Y., for a "semiconductor structure and manufacturing method of the same."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention provides a semiconductor structure and a manufacturing method thereof. The method comprises: providing a semiconductor substrate comprising semiconductor devices; depositing a copper diffusion barrier layer on the semiconductor substrate; forming a copper composite layer on the copper diffusion barrier layer; decomposing the copper composite at corresponding positions, where copper interconnection is to be formed, into copper according to the shape of the copper interconnection; and etching off the undecomposed copper composite and the copper diffusion barrier layer underneath, to interconnect the semiconductor devices. The present invention is adaptive for manufacturing interconnection in integrated circuits."
The patent application was filed on Sept. 19, 2010 (12/990,990). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,354,343&OS=8,354,343&RS=8,354,343
Written by Arpi Sharma; edited by Anand Kumar.
(c) 2013 Targeted News Service
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