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GLOBALFOUNDRIES Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Jan. 22 -- GLOBALFOUNDRIES, Grand Cayman, Cayman Islands, has been assigned a patent (8,354,719) developed by Kisik Choi, Hopewell Junction, N.Y., and Robert J. Miller, Yorktown Heights, N.Y., for a "finned semiconductor device with oxygen diffusion barrier regions, and related fabrication methods."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor device and related fabrication methods are provided. One exemplary fabrication method forms a fin arrangement overlying an oxide layer, where the fin arrangement includes one or more semiconductor fin structures. The method continues by nitriding exposed portions of the oxide layer without nitriding the one or more semiconductor fin structures, resulting in nitrided portions of the oxide layer. Thereafter, a gate structure is formed transversely overlying the fin arrangement, and overlying the exposed portions of the oxide layer. The nitrided portions of the oxide layer substantially inhibit diffusion of oxygen from the oxide layer into the gate structure."
The patent application was filed on Feb. 18, 2010 (12/708,213). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,354,719.PN.&OS=PN/8,354,719&RS=PN/8,354,719
Written by Kusum Sangma; edited by Anand Kumar.
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(c) 2013 Targeted News Service
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