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TMCNet:  Global IGBT based Power Module Market 2012-2016 - High Cost Proving to Be a Major Challenge

[January 30, 2013]

Global IGBT based Power Module Market 2012-2016 - High Cost Proving to Be a Major Challenge

(M2 PressWIRE Via Acquire Media NewsEdge) Dublin - Research and Markets (http://www.researchandmarkets.com/research/kzsq2f/global_igbt_based) has announced the addition of the "Global IGBT based Power Module Market 2012-2016" report to their offering.


This rpeort, Global IGBT-based Power Module Market 2012-2016, is based on an in-depth analysis covering the Americas, and the EMEA and APAC regions. The report aims to aid decision makers' understanding of the present and future landscape of the market.

Commenting on the report, an analyst from TechNavio's Engineering team said: There is an increasing focus on insulated gate bipolar transistor (IGBT) chip optimization because of the increasing need for higher power density, higher power output, and increased thermal resistivity. IGBTs are used extensively in power electronic devices across various applications. Several end-users prefer IGBT chips with compact design, small size, and high reliability in order to improve the functionality of power electronic devices. Several market vendors are investing heavily in R&D processes to manufacture optimized chips to increase the operational efficiency of IGBT-based modules. The increasing focus on IGBT chip optimization will have a positive impact on the growth of the Global IGBT-based Power Module market during the forecast period.

According to the report, one of the major drivers is the increasing need for the production of energy from renewable energy sources. It is estimated that the global energy consumption will increase massively by 2030. The increase in energy consumption coupled with the decrease in fossil energy resources mandates the use of renewable energy resources for the production of electrical energy. IGBT-based power modules are extensively used in wind power plants and solar panels.

Further, the report reveals that one of the major challenges is the high cost of IGBT-based power modules.

The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to a SWOT analysis of the key vendors.

Key Topics Covered: 01. Executive Summary 02. Introduction 03. Market Coverage 04. Market Landscape 05. Geographical Segmentation 06. Vendor Landscape 07. Market Growth Drivers 08. Drivers and their Impact 09. Market Challenges 10. Impact of Drivers and Challenges 11. Market Trends 12. Key Vendor Analysis 13. Other Reports in this Series Companies Mentioned - Mitsubishi Electric - Infineon Technologies AG - Fuji Electric Holdings - Semikron International - ABB - Toshiba - NXP Semiconductors - Fairchild Semiconductor International - STMicroelectronics - Renesas Electronics For more information visit http://www.researchandmarkets.com/research/kzsq2f/global_igbt_based CONTACT: Research and Markets, Laura Wood, Senior Manager.

press@researchandmarkets.com Fax from USA: 646-607-1907 Fax from rest of the world: +353-1-481-1716 Sector: Environmental (http://www.researchandmarkets.com/categories.asp cat_id=43&campaign_id=kzsq2f) ((M2 Communications disclaims all liability for information provided within M2 PressWIRE. Data supplied by named party/parties. Further information on M2 PressWIRE can be obtained at http://www.presswire.net on the world wide web. Inquiries to info@m2.com)).

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