International Business Machines Assigned Patent for Electrical Overstress Protection Circuit
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Feb. 1 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,363,367) developed by six co-inventors for an "electrical overstress protection circuit." The co-inventors are John B. Campi Jr., Westford, Vt., Shunhua T. Chang, South Burlington, Vt., Kiran V. Chatty, Williston, Vt., Robert J. Gauthier Jr., Hinesburg, Vt., Junjun Li, Williston, Vt., and Mujahid Muhammad, Essex Junction, Vt.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor circuit for electric overstress (EOS) protection is provided. The semiconductor circuit employs an electrostatic discharge (ESD) protection circuit, which has a resistor-capacitor (RC) time-delay network connected to a discharge capacitor. An electronic component that has voltage snapback property or a diodic behavior is connected to alter the logic state of the gate of the discharge transistor under an EOS event. Particularly, the electronic component is configured to turn on the gate of the discharge capacitor throughout the duration of an electrical overstress (EOS) condition as well as throughout the duration of an ESD event. A design structure may be employed to design or manufacture a semiconductor circuit that provides protection against an EOS condition without time limitation, i.e., without being limited by the time constant of the RC time delay network for EOS events that last longer than 1 microsecond."
The patent application was filed on Dec. 7, 2009 (12/632,015). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,363,367&OS=8,363,367&RS=8,363,367
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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