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Texas Instruments Assigned Patent for Structure and Method for Power Field Effect Transistor
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Feb. 2 -- Texas Instruments, Dallas, has been assigned a patent (8,361,839) developed by Sreenivasan K. Koduri, Allen, Texas, for a "structure and method for power field effect transistor."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Methods for fabricating a packaged semiconductor device includes providing a metal plate having a single flat first surface and a parallel second surface. The flat first surface ending in four sawed plate sides. The plate having on the second surface at least one mesa of the same metal and a linear array of insular mesas. The at least one mesa is raised from the second surface. A single terminal of a semiconductor chip is attached to the second plate surface."
The patent application was filed on Aug. 14, 2012 (13/585,393). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,361,839.PN.&OS=PN/8,361,839&RS=PN/8,361,839
Written by Kusum Sangma; edited by Anand Kumar.
KS0202AK0202-837292
(c) 2013 Targeted News Service
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