Alpha & Omega Semiconductor Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Feb. 9 -- Alpha & Omega Semiconductor, Sunnyvale, Calif., has been assigned a patent (8,367,501) developed by Sik Lui, Sunnyvale, Calif., and Anup Bhalla, Santa Clara, Calif., for "oxide terminated trench MOSFET with three or four masks."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "An oxide termination semiconductor device may comprise a plurality of gate trenches, a gate runner, and an insulator termination trench. The gate trenches are located in an active region. Each gate trench includes a conductive gate electrode. The insulator termination trench is located in a termination region that surrounds the active region. The insulator termination trench is filled with an insulator material to form an insulator termination for the semiconductor device. The device can be made using a three-mask or four-mask process."
The patent application was filed on March 24, 2010 (12/731,112). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,501&OS=8,367,501&RS=8,367,501
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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