International Business Machines Assigned Patent for Self-aligned Patterned Etch Stop Layers for Semiconductor Devices
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Feb. 9 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,367,544) developed by six co-inventors for "self-aligned patterned etch stop layers for semiconductor devices." The co-inventors are Kangguo Cheng, Albany, N.Y., Lawrence A. Clevenger, Hopewell Junction, N.Y., Johnathan E. Faltermeier, Albany, N.Y., Stephan Grunow, Hopewell Junction, N.Y., Kaushik A. Kumar, Hopewell Junction, N.Y., and Kevin S. Petrarca, Hopewell Junction, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of forming a semiconductor device includes patterning a photoresist layer formed over a homogeneous semiconductor device layer to be etched; subjecting the semiconductor device to an implant process that selectively implants a sacrificial etch stop layer that is self-aligned in accordance with locations of features to be etched within the homogeneous semiconductor device layer, and at a desired depth for the features to be etched; etching a feature pattern defined by the patterned photoresist layer into the homogenous semiconductor device layer, stopping on the implanted sacrificial etch stop layer; and removing remaining portion of the implanted sacrificial etch stop layer prior to filling the etched feature pattern with a fill material."
The patent application was filed on Oct. 20, 2009 (12/582,137). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,544&OS=8,367,544&RS=8,367,544
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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