Micron Technology Assigned Patent for Methods for Fabricating Contacts of Semiconductor Device Structures and Methods for Designing Semiconductor...
(Targeted News Service Via Acquire Media NewsEdge) Micron Technology Assigned Patent for Methods for Fabricating Contacts of Semiconductor Device Structures and Methods for Designing Semiconductor Device Structures
By Targeted News Service
ALEXANDRIA, Va., Feb. 9 -- Micron Technology, Boise, Idaho, has been assigned a patent (8,367,482) developed by four co-inventors for "methods for fabricating contacts of semiconductor device structures and methods for designing semiconductor device structures." The co-inventors are John K. Lee, Boise, Idaho, Hyuntae Ki, Boise, Idaho, Richard L. Stocks, Boise, Idaho, and Luan Tran, Meridian, Idaho.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Methods for fabricating contacts of semiconductor device structures include forming a dielectric layer over a semiconductor substrate with active-device regions spaced at a first pitch, forming a first plurality of substantially in-line apertures over every second active-device region of the active-device regions, and forming a second plurality of substantially in-line apertures laterally offset from apertures of the first plurality over active-device regions over which apertures of the first plurality are not located. Methods for designing semiconductor device structures include forming at least two laterally offset sets of contacts over a substrate including active-device regions at a first pitch, the contacts being formed at a second pitch that is about twice the first pitch."
The patent application was filed on May 23, 2011 (13/113,468). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,482&OS=8,367,482&RS=8,367,482
Written by Satyaban Rath; edited by Hemanta Panigrahi.
(c) 2013 Targeted News Service
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