International Business Machines Assigned Patent for Embedded Silicon Germanium N-type Filed Effect Transistor for Reduced Floating Body Effect
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Feb. 9 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,367,485) developed by four co-inventors for an "embedded silicon germanium n-type filed effect transistor for reduced floating body effect." The co-inventors are Leland Chang, New York, Isaac Lauer, White Plains, N.Y., Chung-Hsun Lin, White Plains, N.Y., and Jeffrey W. Sleight, Ridgefield, Conn.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for fabricating a semiconductor device includes forming a gate stack on an active region of a silicon-on-insulator substrate. The active region is within a semiconductor layer and is doped with an p-type dopant. A gate spacer is formed surrounding the gate stack. A first trench is formed in a region reserved for a source region and a second trench is formed in a region reserved for a drain region. The first and second trenches are formed while maintaining exposed the region reserved for the source region and the region reserved for the drain region. Silicon germanium is epitaxially grown within the first trench and the second trench while maintaining exposed the regions reserved for the source and drain regions, respectively."
The patent application was filed on Sept. 1, 2009 (12/551,941). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,485&OS=8,367,485&RS=8,367,485
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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