U.S. Patents Awarded to Inventors in New York (Feb. 9)

(Targeted News Service Via Acquire Media NewsEdge) Targeted News Service Targeted News Service ALEXANDRIA, Va., Feb. 9 -- The following federal patents were awarded to inventors in New York.

*** University of Rochester Assigned Patent ALEXANDRIA, Va., Feb. 9 -- The University of Rochester, Rochester, N.Y., has been assigned a patent (8,366,653) developed by Shakeel R. Shareef, Pittsford, N.Y., and Mustafa A. G. Abushagur, Rochester, N.Y., for an "intraocular pressure regulating device." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Systems and methods are described for implanting a device in a mammalian eye to raise intraocular pressure. In some embodiments, the device (54) includes an arcuate body that, when implanted, obstructs aqueous humor outflow from the anterior chamber (38) of the eye." The patent application was filed on March 13, 2008 (12/531,293). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=83,66,653.PN.&OS=PN/83,66,653&RS=PN/83,66,653 Written by Amal Ahmed; edited by Jaya Anand.

*** Penumbra Assigned Patent ALEXANDRIA, Va., Feb. 9 -- Penumbra, Alameda, Calif., has been assigned a patent (8,366,735) developed by four co-inventors for a "system and method for treating ischemic stroke." The co-inventors are Arani Bose, New York, Vikas Gupta, San Leandro, Calif., Sean Donahue, Half Moon Bay, Calif., and Delilah Hui, American Canyon, Calif.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A thromboembolic removal system for treating ischemic stroke includes an aspiration catheter and an elongate member having a separator on a distal portion of the elongate member. During use of the thromboembolic removal system, the aspiration catheter and elongate member are positioned in a blood vessel, with the elongate member extending through the lumen of the aspiration catheter. Vacuum is applied through the aspiration catheter and the separator is deployed distal to the aspiration catheter into contact with thromboembolic material within a blood vessel. Manipulation of the separator during aspiration can facilitate aspiration by loosening, separating, or softening pieces of thromboembolic material, by removing any clogs or flow restrictions within the lumen of the aspiration catheter, and/or by pushing or plunging loosened material towards and/or into the distal end of the aspiration catheter for subsequent aspiration out of the body." The patent application was filed on Aug. 24, 2005 (11/210,634). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=83,66,735.PN.&OS=PN/83,66,735&RS=PN/83,66,735 Written by Amal Ahmed; edited by Jaya Anand.

*** University of Rochester Assigned Patent ALEXANDRIA, Va., Feb. 9 -- The University of Rochester, Rochester, N.Y., has been assigned a patent (8,367,633) developed by Luojing Chen, Rochester, N.Y., and Jiyong Zhao, Rochester, N.Y., for "methods of treating B-cell cancers." The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention is directed to methods of causing malignant B-cells and treating malignant B-cells. These methods involve the use of an inhibitor of PKK activity, whether active directly against PKK or effective to knockdown PKK expression, which when introduced into a malignant B cell (or administered to a patient) is effective to cause cell death of the malignant B cell, thereby treating the B-cell malignancy." The patent application was filed on Aug. 6, 2008 (12/672,088). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,633&OS=8,367,633&RS=8,367,633 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** Duke University Assigned Patent ALEXANDRIA, Va., Feb. 9 -- Duke University, Durham, N.C., has been assigned a patent (8,367,627) developed by five co-inventors for "focused libraries, functional profiling, laser SELEX, and DESELEX." The co-inventors are Bruce A. Sullenger, Chapel Hill, N.C., Juliana M. Layzer, Durham, N.C., Christopher P. Rusconi, Durham, N.C., Sabah Oney, Durham, N.C., and Nanette L.S. Que-Gewirth, Buffalo, N.Y.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "Focused aptamer libraries are constructed in accordance with a proteome (i.e., complex mixture of native biomolecules). The libraries may be screened to identify one or more candidate aptamers with desired biological activities other than specific binding to a target. Aptamers which are selected or derivatives thereof may be used for those specific activities in biological systems. Any combination of deconvoluting a focused library (functional profiling), increasing frequencies of particular aptamers in a focused library (Laser SELEX), and decreasing frequencies of particular aptamers in a focused library (DeSELEX) may be performed prior to assaying biological activity." The patent application was filed on Sept. 15, 2006 (11/992,125). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,627&OS=8,367,627&RS=8,367,627 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** City University of New York Assigned Patent ALEXANDRIA, Va., Feb. 9 -- City University of New York, New York, has been assigned a patent (8,367,615) developed by Marie T. Filbin, New York, and Sari S. Hannila, New York, for a "stimulation of neuron regeneration by secretory leukocyte protease inhibitor." The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention provides methods for stimulating neuronal survival, growth and regeneration by administering SLPIs to animals, such as humans. These methods can be used to treat a variety of neurological conditions such as neural injuries and degenerative diseases in subjects in need thereof." The patent application was filed on March 30, 2007 (12/225,639). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,615&OS=8,367,615&RS=8,367,615 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** Marinus Pharmaceuticals Assigned Patent ALEXANDRIA, Va., Feb. 9 -- Marinus Pharmaceuticals, Branford, Conn., has been assigned a patent (8,367,651) developed by Kenneth Shaw, Weston, Conn., and Mingbao Zhang, Millwood, N.Y., for "solid ganaxolone formulations and methods for the making and use thereof." The abstract of the patent published by the U.S. Patent and Trademark Office states: "In certain embodiments, the invention is directed to composition comprising stable particles comprising ganaxolone, wherein the volume weighted median diameter (D50) of the particles is from about 50 nm to about 500 nm." The patent application was filed on March 21, 2011 (13/052,798). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,651&OS=8,367,651&RS=8,367,651 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** Beech Tree Labs Assigned Patent ALEXANDRIA, Va., Feb. 9 -- Beech Tree Labs, Delanson, N.Y., has been assigned a patent (8,367,610) developed by John McMichael, Delanson, N.Y., for a "method of treating cravings by administration of nerve growth factor." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for administering nerve growth factor to treat cravings is provided. Pharmaceutical compositions for the treatment of cravings comprising nerve growth factor are also provided." The patent application was filed on Oct. 5, 2009 (12/573,706). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,610&OS=8,367,610&RS=8,367,610 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Interconnect Structure Including a Modified Photoresist as a Permanent Interconnect Dielectric and Method of Fabricating Same ALEXANDRIA, Va., Feb. 9 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,367,540) developed by Qinghuang Lin, Yorktown Heights, N.Y., for an "interconnect structure including a modified photoresist as a permanent interconnect dielectric and method of fabricating same." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A photoresist conversion that changes a patterned photoresist into a permanent patterned interconnect dielectric is described. The photoresist conversion process includes adding a dielectric enabling element into a patterned photoresist. The dielectric enabling element-containing photoresist is converted into a permanent patterned dielectric material by performing a curing step. In one embodiment, a method is described that includes providing at least one photoresist to an upper surface of a substrate. At least one interconnect pattern is formed into the at least one photoresist. A dielectric enabling element is added to the patterned photoresist and thereafter the patterned photoresist including the dielectric enabling element is cured into a cured permanent patterned dielectric material. The cured permanent patterned dielectric material includes the dielectric enabling therein." The patent application was filed on Nov. 19, 2009 (12/622,111). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,540&OS=8,367,540&RS=8,367,540 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Self-aligned Contacts for Field Effect Transistor Devices ALEXANDRIA, Va., Feb. 9 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,367,508) developed by four co-inventors for "self-aligned contacts for field effect transistor devices." The co-inventors are Dechao Guo, Wappingers Falls, N.Y., Wilfried E. Haensch, Somers, N.Y., Xinhui Wang, Poughkeepsie, N.Y., Keith Kwong Hon Wong, Wappingers Falls, N.Y.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for forming a field effect transistor includes forming a gate stack, a spacer adjacent to opposing sides of the gate stack, a silicide source region and a silicide drain region on opposing sides of the spacer, epitaxially growing silicon on the source region and the drain region; forming a liner layer on the gate stack and the spacer, removing a portion of the liner layer to expose a portion of the hardmask layer, removing the exposed portions of the hardmask layer to expose a silicon layer of the gate stack, removing exposed silicon to expose a portion of a metal layer of the gate stack, the source region, and the drain region; and depositing a conductive material on the metal layer of the gate stack, the silicide source region, and the silicide drain region." The patent application was filed on April 9, 2010 (12/757,201). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,508&OS=8,367,508&RS=8,367,508 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Scavanging Metal Stack for a High-k Gate Dielectric ALEXANDRIA, Va., Feb. 9 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,367,496) developed by four co-inventors for a "scavanging metal stack for a high-k gate dielectric." The co-inventors are Takashi Ando, Tuckahoe, N.Y., Changhwan Choi, Yorktown Heights, N.Y., Martin M. Frank, Dobbs Ferry, N.Y., and Vijay Narayanan, New York.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A stack of a high-k gate dielectric and a metal gate structure includes a lower metal layer, a scavenging metal layer, and an upper metal layer. The scavenging metal layer meets the following two criteria 1) a metal (M) for which the Gibbs free energy change of the reaction Si+2/y M.sub.xO.sub.y.fwdarw.2x/y M+SiO.sub.2 is positive 2) a metal that has a more negative Gibbs free energy per oxygen atom for formation of oxide than the material of the lower metal layer and the material of the upper metal layer. The scavenging metal layer meeting these criteria captures oxygen atoms as the oxygen atoms diffuse through the gate electrode toward the high-k gate dielectric. In addition, the scavenging metal layer remotely reduces the thickness of a silicon oxide interfacial layer underneath the high-k dielectric. As a result, the equivalent oxide thickness (EOT) of the total gate dielectric is reduced and the field effect transistor maintains a constant threshold voltage even after high temperature processes during CMOS integration." The patent application was filed on May 3, 2011 (13/099,790). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,496&OS=8,367,496&RS=8,367,496 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Multiple Orientation Nanowires with Gate Stack Sensors ALEXANDRIA, Va., Feb. 9 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,367,492) developed by Dureseti Chidambarrao, Weston, Conn., Xiao Hu Liu, Briarcliff Manor, N.Y., and Lidija Sekaric, Mount Kisco, N.Y., for a "multiple Orientation Nanowires with Gate Stack Sensors." The abstract of the patent published by the U.S. Patent and Trademark Office states: "An electronic device includes a conductive channel defining a crystal structure and having a length and a thickness t.sub.C; and a dielectric film of thickness t.sub.g in contact with a surface of the channel. Further, the film comprises a material that exerts one of a compressive or a tensile force on the contacted surface of the channel such that electrical mobility of the charge carriers (electrons or holes) along the channel length is increased due to the compressive or tensile force in dependence on alignment of the channel length relative to the crystal structure. Embodiments are given for chips with both hole and electron mobility increased in different transistors, and a method for making such a transistor or chip." The patent application was filed on April 24, 2012 (13/593,686). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,492&OS=8,367,492&RS=8,367,492 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Antifuse Structure for in Line Circuit Modification ALEXANDRIA, Va., Feb. 9 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,367,484) developed by four co-inventors for an "antifuse structure for in line circuit modification." The co-inventors are Terence L. Kane, Hopewell Junction, N.Y., Michael P. Tenney, Hopewell Junction, N.Y., Yun-Yu Wang, Hopewell Junction, N.Y., and Keith Kwong Hon Wong, Hopewell Junction, N.Y.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material." The patent application was filed on Jan. 27, 2012 (13/360,248). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,484&OS=8,367,484&RS=8,367,484 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** Micron Technology Assigned Patent for High-k Dielectrics with Gold Nano-particles ALEXANDRIA, Va., Feb. 9 -- Micron Technology, Boise, Idaho, has been assigned a patent (8,367,506) developed by Kie Y. Ahn, Chappaqua, N.Y., and Leonard Forbes, Corvallis, Ore., for "high-k dielectrics with gold nano-particles." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A metal oxide semiconductor (MOS) structure having a high dielectric constant gate insulator layer containing gold (Au) nano-particles is presented with methods for forming the layer with high step coverage of underlying topography, high surface smoothness, and uniform thickness. The transistor may form part of a logic device, a memory device, a persistent memory device, a capacitor, as well as other devices and systems. The insulator layer may be formed using atomic layer deposition (ALD) to reduce the overall device thermal exposure. The insulator layer may be formed of a metal oxide, a metal oxycarbide, a semiconductor oxide, or semiconductor oxide oxycarbide, and the gold nano-particles in insulator layer increase the work function of the insulator layer and affect the tunneling current and the threshold voltage of the transistor." The patent application was filed on June 4, 2007 (11/810,004). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,506&OS=8,367,506&RS=8,367,506 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines, Advanced Technology Materials Assigned Patent ALEXANDRIA, Va., Feb. 9 -- International Business Machines, Armonk, N.Y., and Advanced Technology Materials, Danbury, Conn., have been assigned a patent (8,367,555) developed by five co-inventors for a "removal of masking material." The co-inventors are Ali Afzali-Ardakani, Ossining, N.Y., Emanuel Israel Cooper, Scarsdale, N.Y., Mahmoud Khojasteh, Poughkeepsie, N.Y., Ronald W. Nunes, Hopewell Junction, N.Y., and George Gabriel Totir, Newtown, Conn.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate." The patent application was filed on Dec. 11, 2009 (12/636,015). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,555&OS=8,367,555&RS=8,367,555 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Self-aligned Patterned Etch Stop Layers for Semiconductor Devices ALEXANDRIA, Va., Feb. 9 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,367,544) developed by six co-inventors for "self-aligned patterned etch stop layers for semiconductor devices." The co-inventors are Kangguo Cheng, Albany, N.Y., Lawrence A. Clevenger, Hopewell Junction, N.Y., Johnathan E. Faltermeier, Albany, N.Y., Stephan Grunow, Hopewell Junction, N.Y., Kaushik A. Kumar, Hopewell Junction, N.Y., and Kevin S. Petrarca, Hopewell Junction, N.Y.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of forming a semiconductor device includes patterning a photoresist layer formed over a homogeneous semiconductor device layer to be etched; subjecting the semiconductor device to an implant process that selectively implants a sacrificial etch stop layer that is self-aligned in accordance with locations of features to be etched within the homogeneous semiconductor device layer, and at a desired depth for the features to be etched; etching a feature pattern defined by the patterned photoresist layer into the homogenous semiconductor device layer, stopping on the implanted sacrificial etch stop layer; and removing remaining portion of the implanted sacrificial etch stop layer prior to filling the etched feature pattern with a fill material." The patent application was filed on Oct. 20, 2009 (12/582,137). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,544&OS=8,367,544&RS=8,367,544 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Electrical Fuse Formed By Replacement Metal Gate Process ALEXANDRIA, Va., Feb. 9 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,367,494) developed by Ying Li, Newburgh, N.Y., and Ramachandra Divakaruni, Ossining, N.Y., for an "electrical fuse formed by replacement metal gate process." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method is provided for fabricating an electrical fuse and a field effect transistor having a metal gate which includes removing material from first and second openings in a dielectric region overlying a substrate, wherein the first opening is aligned with an active semiconductor region of the substrate, and the second opening is aligned with an isolation region of the substrate, and the active semiconductor region including a source region and a drain region adjacent edges of the first opening. An electrical fuse can be formed which has a fuse element filling the second opening, the fuse element being a monolithic region of a single conductive material being a metal or a conductive compound of a metal. A metal gate can be formed which extends within the first opening to define a field effect transistor ("FET") which includes the metal gate and the active semiconductor region." The patent application was filed on April 5, 2011 (13/080,019). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,494&OS=8,367,494&RS=8,367,494 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Embedded Silicon Germanium N-type Filed Effect Transistor for Reduced Floating Body Effect ALEXANDRIA, Va., Feb. 9 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,367,485) developed by four co-inventors for an "embedded silicon germanium n-type filed effect transistor for reduced floating body effect." The co-inventors are Leland Chang, New York, Isaac Lauer, White Plains, N.Y., Chung-Hsun Lin, White Plains, N.Y., and Jeffrey W. Sleight, Ridgefield, Conn.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for fabricating a semiconductor device includes forming a gate stack on an active region of a silicon-on-insulator substrate. The active region is within a semiconductor layer and is doped with an p-type dopant. A gate spacer is formed surrounding the gate stack. A first trench is formed in a region reserved for a source region and a second trench is formed in a region reserved for a drain region. The first and second trenches are formed while maintaining exposed the region reserved for the source region and the region reserved for the drain region. Silicon germanium is epitaxially grown within the first trench and the second trench while maintaining exposed the regions reserved for the source and drain regions, respectively." The patent application was filed on Sept. 1, 2009 (12/551,941). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,485&OS=8,367,485&RS=8,367,485 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Use of an Organic Planarizing Mask for Cutting a Plurality of Gate Lines ALEXANDRIA, Va., Feb. 9 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,367,556) developed by five co-inventors for "use of an organic planarizing mask for cutting a plurality of gate lines." The co-inventors are Nicholas C.M. Fuller, North Hills, N.Y., Pratik P. Joshi, Cliffside Park, N.J., Mahmoud Khojasteh, Poughkeepsie, N.Y., Rajiv M. Ranade, Brewster, N.Y., and George G. Totir, Newtown, Conn.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "An organic planarizing layer (OPL) is formed atop a semiconductor substrate which includes a plurality of gate lines thereon. Each gate line includes at least a high k gate dielectric and a metal gate. A patterned photoresist having at least one pattern formed therein is then positioned atop the OPL. The at least one pattern in the photoresist is perpendicular to each of the gate lines. The pattern is then transferred by etching into the OPL and portions of each of the underlying gate lines to provide a plurality of gate stacks each including at least a high k gate dielectric portion and a metal gate portion. The patterned photoresist and the remaining OPL layer are then removed utilizing a sequence of steps including first contacting with a first acid, second contacting with an aqueous cerium-containing solution, and third contacting with a second acid." The patent application was filed on Dec. 1, 2011 (13/309,174). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,556&OS=8,367,556&RS=8,367,556 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Structure and Method to Improve Current-carrying Capabilities of C4 joints ALEXANDRIA, Va., Feb. 9 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,367,543) developed by seven co-inventors for "structure and method to improve current-carrying capabilities of C4 joints." The co-inventors are Mukta Ghate Farooq, Hopewell Junction, N.Y., Jasvir Singh Jaspal, Poughkeepsie, N.Y., William Francis Landers, Wappingers Falls, N.Y., Thomas E. Lombardi, Poughkeepsie, N.Y., Hai Pham Longworth, Poughkeepsie, N.Y., H. Bernhard Pogge, Hopewell Junction, N.Y., and Roger A. Quon, Rhinebeck, N.Y.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A system and method comprises depositing a dielectric layer on a substrate and depositing a metal layer on the dielectric layer. The system and method further includes depositing a high temperature diffusion barrier metal cap on the metal layer. The system and method further includes depositing a second dielectric layer on the high temperature diffusion barrier metal cap and the first dielectric layer, and etching a via into the second dielectric layer, such that the high temperature diffusion barrier metal cap is exposed. The system and method further includes depositing an under bump metallurgy in the via, and forming a C4 ball on the under bump metallurgy layer." The patent application was filed on May 21, 2006 (11/308,396). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,543&OS=8,367,543&RS=8,367,543 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Antifuse Structure for in Line Circuit Modification ALEXANDRIA, Va., Feb. 9 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,367,483) developed by four co-inventors for an "antifuse structure for in line circuit modification." The co-inventors are Terence L. Kane, Hopewell Junction, N.Y., Michael P. Tenney, Hopewell Junction, N.Y., Yun-Yu Wang, Hopewell Junction, N.Y., and Keith Kwong Hon Wong, Hopewell Junction, N.Y.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material." The patent application was filed on Jan. 27, 2012 (13/360,203). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,483&OS=8,367,483&RS=8,367,483 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** GM Global Technology Operations Assigned Patent for Remedial Start Method in a Fuel Cell ALEXANDRIA, Va., Feb. 9 -- GM Global Technology Operations, Detroit, has been assigned a patent (8,367,260) developed by Seth E. Lerner, Honeoye Falls, N.Y., Akbar Chowdhury, Pittsford, N.Y., and Steven G. Goebel, Victor, N.Y., for a "remedial start method in a fuel cell." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A remedial method for starting a fuel cell system is described. The method includes determining if the remedial method is required; providing air to an exhaust of a fuel cell stack; setting a hydrogen flow rate to an anode side of the fuel cell stack; providing a predetermined volume of hydrogen to the anode side of the fuel cell at the hydrogen flow rate; providing a predetermined volume of air to a cathode side of the fuel cell stack after the predetermined volume of hydrogen has been provided to the anode side while continuing to provide air to the exhaust of the fuel cell stack and hydrogen to the anode side of the fuel cell stack; determining if a stack voltage is stable after the predetermined volume of air has been provided to the cathode side; and closing the anode outlet valve after the stack voltage is stable." The patent application was filed on Oct. 8, 2009 (12/575,651). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,260.PN.&OS=PN/8,367,260&RS=PN/8,367,260 Written by Kusum Sangma; edited by Anand Kumar.

*** FuelCell Energy Assigned Patent ALEXANDRIA, Va., Feb. 9 -- FuelCell Energy, Danbury, Conn., has been assigned a patent (8,367,256) developed by Fred C. Jahnke, Rye, N.Y., Joseph M. Daly, Bethel, Conn., and Anthony J. Leo, New Milford, Conn., for a "water recovery assembly for use in high temperature fuel cell systems." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A water recovery assembly for use in a fuel cell system having an anode and a cathode, the anode being adapted to receive fuel and output anode exhaust, the water recovery assembly comprising a first cooling assembly adapted to receive and quench cool the anode exhaust and to recover a first portion of water including electrolyte from the anode exhaust, and to output quenched anode exhaust and the first portion of water, and a second cooling assembly adapted to receive the quenched anode exhaust and to recover a second portion of water from the quenched anode exhaust, the second portion of water being suitable for humidifying the fuel supplied to the anode." The patent application was filed on Jan. 9, 2008 (11/971,663). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,256.PN.&OS=PN/8,367,256&RS=PN/8,367,256 Written by Kusum Sangma; edited by Anand Kumar.

*** Greatbatch Assigned Patent ALEXANDRIA, Va., Feb. 9 -- Greatbatch, Clarence, N.Y., has been assigned a patent (8,367,151) developed by Robert C. O'Brien, Miramar, Fla., and Christine A. Frysz, Orchard Park, N.Y., for a "stent coating for eluting medication." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A vascular stent comprising a drug-eluting outer layer of a porous sputtered columnar metal having each column capped with a biocompatible carbon-containing material is described. This is done by placing the stent over a close-fitting mandrel and rotating the assembly in a sputter flux. The result is a coating that is evenly distributed over the outward-facing side of the stent's wire mesh while preventing the sputtered columnar coating from reaching the inward facing side where a smooth hemocompatible surface is required. The stent is then removed from the mandrel, exposing all surfaces, and finally coated with a layer of carbon such as amorphous carbon or diamond-like carbon. The carbonaceous coating enhances biocompatibility without preventing elutriation of a therapeutic drug provided in the porosity formed between the columnar structures. The result is a stent that is adapted to both the hemodynamic and the immune response requirements of its vascular environment." The patent application was filed on April 7, 2010 (12/755,777). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,151.PN.&OS=PN/8,367,151&RS=PN/8,367,151 Written by Kusum Sangma; edited by Anand Kumar.

*** GM Global Technology Operations Assigned Patent for Flow Field Plate Arrangement for a Fuel Cell ALEXANDRIA, Va., Feb. 9 -- GM Global Technology Operations, Detroit, has been assigned a patent (8,367,270) developed by Steven G. Goebel, Victor, N.Y., Daniel Miller, Victor, N.Y., and Matthew J. Beutel, Webster, N.Y., for a "flow field plate arrangement for a fuel cell." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A fuel cell comprising anode and cathode flow field plates having a multitude of flow channels separated by land features wherein the land features of the anode side are wider than the land features of the cathode side is disclosed. In fuel cells, the flow field plate arrangement of the present invention provides higher power (lower cost per kW), improved durability, and less stringent assembly alignment." The patent application was filed on Aug. 29, 2008 (12/201,443). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,270.PN.&OS=PN/8,367,270&RS=PN/8,367,270 Written by Kusum Sangma; edited by Anand Kumar.

*** Advanced Cardiovascular System Assigned Patent ALEXANDRIA, Va., Feb. 9 -- Advanced Cardiovascular System, Santa Clara, Calif., has been assigned a patent (8,367,149) developed by Veronica J. Santos, Ithaca, N.Y., and Santosh Prabhu, San Jose, Calif., for a "method of coating a stent having variable drug release rate." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of coating a stent may comprise applying a composition including a drug and a polymer to the stent to form a coating. The release rate of the drug from the coating gradually increases along a length of the stent which extends axially from opposite ends of the stent. The variable drug release rate can be accomplished by varying the coating thickness, by applying a barrier region over the drug-containing composition, and/or by having different polymers in the coating, the polymers having different drug permeabilities." The patent application was filed on Sept. 21, 2010 (12/887,311). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,149.PN.&OS=PN/8,367,149&RS=PN/8,367,149 Written by Kusum Sangma; edited by Anand Kumar.

*** Anthrogenesis Assigned Patent ALEXANDRIA, Va., Feb. 9 -- Anthrogenesis, Warren, N.J., has been assigned a patent (8,367,409) developed by 10 co-inventors for "amnion derived adherent cells." The co-inventors are Stewart Abbot, Warren, N.J., James W. Edinger, Belford, N.J., Aleksandar Francki, Annandale, N.J., Aleksandr Kaplunovsky, Budd Lake, N.J., Vladimir Jankovic, New York, Kristen Labazzo, Springfield, N.J., Eric Law, East Brunswick, N.J., Neerav D. Padliya, Scotch Plains, N.J., Jennifer Paredes, Bloomfield, N.J., and Jia-Lun Wang, Cherry Hill, N.J.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "Provided herein are novel angiogenic cells from amnion, referred to as amnion derived adherent cells, and populations of, and compositions comprising, such cells. Further provided herein are methods of obtaining such cells and methods of using the cells in the treatment of individuals." The patent application was filed on Nov. 19, 2009 (12/622,352). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,409&OS=8,367,409&RS=8,367,409 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** Air Liquide Assigned Patent ALEXANDRIA, Va., Feb. 9 -- Air Liquide, Paris, and American Air Liquide, Houston, have been assigned a patent (8,367,531) developed by four co-inventors for "aluminum implant using new compounds." The co-inventors are Vincent M. Omarjee, Albany, N.Y., Christian Dussarrat, Wilmington, Del., Jean-Marc Girard, Tokyo, and Nicolas Blasco, Grenoble, France.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention provides molecules useful for aluminum implant in semiconductor materials. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods." The patent application was filed on March 4, 2011 (13/041,154). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,531&OS=8,367,531&RS=8,367,531 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** GM Global Technology Operations Assigned Patent ALEXANDRIA, Va., Feb. 9 -- GM Global Technology Operations, Detroit, has been assigned a patent (8,367,307) developed by Jeffrey A. Rock, Fairport, N.Y., for a "solution to optical constraint on microtruss processing." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A system for fabricating a radiation-cured structure is provided. The system includes a radiation-sensitive material having a first refractive index; a mask formed from a mask material having a second refractive index; and a radiation source. The mask is disposed between the radiation source and the radiation-sensitive material, and has a plurality of substantially radiation transparent apertures. The radiation source is configured to generate radiation beams for at least one of initiating, polymerizing, and crosslinking the radiation-sensitive material. The system includes at least one of a) an at least one normalizing surface disposed between the radiation source and the mask, b) a refractive fluid having a third refractive index disposed between the radiation source and the mask, and c) the refractive fluid having the third refractive index disposed between the mask and the radiation-sensitive material. A method for fabricating the radiation-cured structure is also provided." The patent application was filed on Feb. 5, 2010 (12/700,800). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,307.PN.&OS=PN/8,367,307&RS=PN/8,367,307 Written by Kusum Sangma; edited by Anand Kumar.

*** TheraSyn Sensors Assigned Patent ALEXANDRIA, Va., Feb. 9 -- TheraSyn Sensors, Eggertsville, N.Y., has been assigned a patent (8,367,418) developed by Scott V. Monte, West Seneca, N.Y., Frank Bright, Williamsville, N.Y., and Jerome Schentag, Amherst, N.Y., for a "method and system to provide personalized pharmaceutical compositions and dosages." The abstract of the patent published by the U.S. Patent and Trademark Office states: "The invention provides a method for determining a suitable drug combination for the treatment of Type 2 diabetes by obtaining data from a Type 2 diabetes population in which all of the Type 2 diabetics are not taking any Type-2 diabetes drugs and obtaining reference levels of glucose supply and insulin demand parameters. Data from discrete samples of Type 2 diabetes populations in which all individuals are being treated with one or more Type 2 diabetes drugs at a therapeutic dose are also obtained, and the effects of the drugs on the glucose supply and insulin demand parameters are used to determine adjustment factors which represent the effect of each of the drugs at the therapeutic dosage, which are used to determined a ratio of a Glucose Supply Index (S) to an Insulin Demand Index (D). The ratio is further utilized in scoring cardiovascular risks for Type 2 diabetics and recommending therapeutic interventions." The patent application was filed on Oct. 25, 2010 (12/911,497). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,418&OS=8,367,418&RS=8,367,418 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** Ultrafab Assigned Patent ALEXANDRIA, Va., Feb. 9 -- Ultrafab, Farmington, N.Y., has been assigned a patent (8,367,181) developed by four co-inventors for an "apparatus and methods for making pile articles and improved pile articles made therewith." The co-inventors are Alexander Z. Chernyak, Pittsford, N.Y., Richard T. Arvidson, Fairport, N.Y., Alan J. DeMello, Newmarket, N.H., and Grant E. Wylie, Brookings, S.D.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "Filamentary materials, such as yarn (18), is wound a frame (28), provided by pairs of movable filaments or wires (35, 38), about which the end of the spindle (22) rotates provides the turns (26) of the winding as the article having the winding is moved along a process path. Mechanically or hydraulically actuated pins (34) support the winding frame in a fixed position. The filaments of the frame may be provided by laterally spaced pairs (44, 46) of filaments of weldable material." The patent application was filed on Sept. 22, 2010 (12/924,179). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,181.PN.&OS=PN/8,367,181&RS=PN/8,367,181 Written by Kusum Sangma; edited by Anand Kumar.

*** Xerox Assigned Patent for Phenolic Urea Hole Blocking Layer Photoconductors ALEXANDRIA, Va., Feb. 9 -- Xerox, Norwalk, Conn., has been assigned a patent (8,367,286) developed by Jin Wu, Pittsford, N.Y., for a "phenolic urea hole blocking layer photoconductors." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A photoconductor that includes, for example, a substrate, an undercoat layer thereover wherein the undercoat layer contains a metal oxide dispersed in a mixture of a urea formaldehyde resin and a phenolic formaldehyde resin; a photogenerating layer; and at least one charge transport layer." The patent application was filed on Feb. 25, 2010 (12/712,304). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,286.PN.&OS=PN/8,367,286&RS=PN/8,367,286 Written by Kusum Sangma; edited by Anand Kumar.

*** Xerox Assigned Patent for Coating Compositions for Fusers and Methods of Use ALEXANDRIA, Va., Feb. 9 -- Xerox, Norwalk, Conn., has been assigned a patent (8,367,175) developed by Santokh Badesha, Pittsford, N.Y., and David J. Gervasi, Pittsford, N.Y., for a "coating compositions for fusers and methods of use thereof." The abstract of the patent published by the U.S. Patent and Trademark Office states: "There is disclosed a fuser member comprising a substrate; and an outer layer thereover comprising (a) a polymer and (b) an organometallic species, wherein said polymer and said organometallic species forms an interpenetrating network upon curing; and wherein the outer layer comprises an increased number of uniform organometallic binding sites, as compared to an outer layer devoid of the interpenetrating network. An image forming apparatus comprising the disclosed fuser member is also disclosed. Moreover, a method of forming a polymer system suitable for use in color fusing applications is disclosed." The patent application was filed on July 22, 2008 (12/177,343). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,175.PN.&OS=PN/8,367,175&RS=PN/8,367,175 Written by Kusum Sangma; edited by Anand Kumar.

*** Cornell Research Foundation, Sloan-Kettering Institute for Cancer Research Assigned Patent ALEXANDRIA, Va., Feb. 9 -- Cornell Research Foundation, Ithaca, N.Y., and Sloan-Kettering Institute for Cancer Research, New York, have been assigned a patent (8,367,322) developed by six co-inventors for an "accelerating identification of single nucleotide polymorphisms and alignment of clones in genomic sequencing." The co-inventors are Francis Barany, New York, Jianzhao Kiu, Boston, Brian W. Kirk, New York, Monib Zirvi, Willingboro, N.J., Norman P. Gerry, Boston, and Philip B. Paty, New York.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention is directed to a method of assembling genomic maps of an organism's DNA or portions thereof. A library of an organism's DNA is provided where the individual genomic segments or sequences are found on more than one clone in the library. Representations of the genome are created, and nucleic acid sequence information is generated from the representations. The sequence information is analyzed to determine clone overlap from a representation. The clone overlap and sequence information from different representations is combined to assemble a genomic map of the organism. Once the genomic map is obtained, genomic sequence information from multiple individuals can be applied to the map and compared with one another to identify single nucleotide polymorphisms. These single nucleotide polymorphisms can be detected, and alleles quantified, by conducting (1) a global PCR amplification which creates a genome representation, and (2) a ligation detection reaction process whose ligation products are captured by hybridization to a support." The patent application was filed on July 17, 2002 (10/198,235). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,322.PN.&OS=PN/8,367,322&RS=PN/8,367,322 Written by Kusum Sangma; edited by Anand Kumar.

*** Cornell University, University of Pennsylvania Assigned Patent ALEXANDRIA, Va., Feb. 9 -- Cornell University, Ithaca, N.Y., and the University of Pennsylvania, Philadelphia, have been assigned a patent (8,367,313) developed by Alexander J. Travis, Ithaca, N.Y., and Gregory S. Kopf, Leawood, Kan., for a "method of determining sperm capacitation." The abstract of the patent published by the U.S. Patent and Trademark Office states: "This invention describes unique patterns of distribution of ganglioside G.sub.M1 in non-capacitated sperm and demonstrates that the pattern of distribution of G.sub.M1 undergoes changes that can be correlated with the process of capacitation and/or with acrosomal exocytosis. Accordingly, the present invention discloses a method for determining the ability of sperm to respond to capacitation and/or acrosomal exocytosis stimuli. The method comprises determination of distribution pattern for G.sub.M1. The method can be used for both diagnostic and predictive purposes when assessing male reproductive fitness, and can also be used to assess the effects of any agent or environment on sperm including cryoprotective agents and protocols, and contraceptive agents." The patent application was filed on March 1, 2010 (12/714,858). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,313.PN.&OS=PN/8,367,313&RS=PN/8,367,313 Written by Kusum Sangma; edited by Anand Kumar.

*** Corning Assigned Patent ALEXANDRIA, Va., Feb. 9 -- Corning, Corning, N.Y., has been assigned a patent (8,367,208) developed by four co-inventors for a "damage resistant chemically-toughened protective cover glass." The co-inventors are Gregory Scott Glaesemann, Corning, N.Y., James Joseph Price, Corning, N.Y., Robert Sabia, Corning, N.Y., and Nagaraja Shashidhar, Painted Post, N.Y.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "The invention is directed to a high strength, chemically toughened protective glass article, the glass article having a high damage tolerance threshold of at least 1500 g as measured by the lack of radial cracks when the load is applied to the glass using a Vickers indenter; preferably greater than 2000 g s measured by the lack of initiation of radial cracks when the load is applied to the glass using a Vickers indenter." The patent application was filed on Feb. 6, 2009 (12/367,185). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,208.PN.&OS=PN/8,367,208&RS=PN/8,367,208 Written by Kusum Sangma; edited by Anand Kumar.

*** International Business Machines Assigned Patent for Method and System for Internal Layer-layer Thermal Enhancement ALEXANDRIA, Va., Feb. 9 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,367,478) developed by four co-inventors for a "method and system for internal layer-layer thermal enhancement." The co-inventors are Gerald K. Bartley, Rochester, Minn., Charles L. Johnson, Fort Myers, Fla., John E. Kelly III, Poughquag, N.Y., and David R. Motschman, Rochester, Minn.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "The exemplary embodiments of the present invention provide a method and apparatus for enhancing the cooling of a chip stack of semiconductor chips. The method includes creating a first chip with circuitry on a first side and creating a second chip electrically and mechanically coupled to the first chip by a grid of connectors. The method further includes creating a cavity in a second side of the first chip between the connectors and filling the cavity with a thermal material. The chip stack of semiconductor chips with enhanced cooling apparatus includes a first chip with circuitry on a first side and a second chip electrically and mechanically coupled to the first chip by a grid of connectors. The apparatus further includes wherein portions of a second side of the first chip between the connectors is removed to provide a cavity in which a thermal material is placed." The patent application was filed on June 2, 2011 (13/151,672). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,367,478&OS=8,367,478&RS=8,367,478 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** Lolliprops Assigned Patent ALEXANDRIA, Va., Feb. 9 -- Lolliprops, New York, has been assigned a patent (8,367,176) developed by Julia Nicole Biancella, Brick, N.J., Jennifer Michelle Biancella, Brick, N.J., and Katherine Madeline Szilagyi, New York, for a repositionable, self-adhesive wallpaper.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A repositionable, self-adhesive wallpaper can be applied to a surface, positioned, repositioned, and can be removed without damaging the underlying surface, allowing the user to change wallpaper designs periodically. Embodiments comprise a vinyl sheet having front and rear surfaces, the front surface having a surface coating that is capable of having an image printed thereon; a removable backing layer comprising a clay coated kraft paper and a release agent; and a pressure sensitive adhesive disposed between the sheet rear surface and the backing layer, the adhesive being an acrylic emulsion adhesive applied to the rear surface, such that after the backing layer has been separated to expose the adhesive the surface covering can be applied to a surface, and the applied surface covering can be removed from the surface and the surface covering can be repositioned and/or reused." The patent application was filed on March 15, 2010 (12/724,132). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,176.PN.&OS=PN/8,367,176&RS=PN/8,367,176 Written by Kusum Sangma; edited by Anand Kumar.

*** Brookhaven Science Associates, University of New York Assigned Patent ALEXANDRIA, Va., Feb. 9 -- Brookhaven Science Associates, Upton, N.Y., and Research Foundation of State University of New York, Stony Brook, N.Y., have been assigned a patent (8,367,109) developed by Devicharan Chidambaram, Middle Island, N.Y., Ying Liu, Stony Brook, N.Y., and Miriam H. Rafailovich, Plainview, N.Y., for a "microbes encapsulated within crosslinkable polymers." The abstract of the patent published by the U.S. Patent and Trademark Office states: "The invention relates to porous films comprising crosslinked electrospun hydrogel fibers. Viable microbes are encapsulated within the crosslinked electrospun hydrogel fibers. The crosslinked electrospun hydrogel fibers are water insoluble and permeable. The invention also relates to methods of making and using such porous films." The patent application was filed on April 8, 2009 (12/420,088). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,109.PN.&OS=PN/8,367,109&RS=PN/8,367,109 Written by Kusum Sangma; edited by Anand Kumar.

*** University of New York, Polytechnic Institute of New York University Assigned Patent ALEXANDRIA, Va., Feb. 9 -- The University of New York, Albany, N.Y., and Polytechnic Institute of New York University, Brooklyn, N.Y., have been assigned a patent (8,367,117) developed by Miriam Rafailovich, Plainview, N.Y., Divya Bhatnagar, Stony Brook, N.Y., and Mary K. Cowman, Mohegan Lake, N.Y., for a "nanocomposite hyaluronic acid-clay based hydrogels." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Hydrogels formed from hyaluronic acid, a nanoclay and gelatin-type A. The hyaluronic acid is preferably dissolved in a cell culture medium containing amino acids, salts, glucose, vitamins and an antibiotic to form a hyaluronic acid solution. The gelatin-type A has a weight/volume of from about 0.02% to 0.08%. The nanoclay is exfoliated in deionized water and preferably includes SiO.sub.2, MgO, Na.sub.2O and Li.sub.2O." The patent application was filed on May 10, 2011 (13/104,605). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,117.PN.&OS=PN/8,367,117&RS=PN/8,367,117 Written by Kusum Sangma; edited by Anand Kumar.

*** Population Council Assigned Patent ALEXANDRIA, Va., Feb. 9 -- Population Council, New York, has been assigned a patent (8,367,098) developed by four co-inventors for a "unique combinations of antimicrobial compositions." The co-inventors are Robin A. Maguire, Ossining, N.Y., Mitchell Thorn, Astoria, N.Y., David M. Phillips, Piermont, N.Y., and Naomi Rutenberg, Washington.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "Disclosed are compositions for inhibiting transmission of a sexually transmitted infection that contain one or more polyanionic microbicides, such as carrageenans, including lambda carrageenan, as well as water-soluble metal salts and specified antiretroviral agents comprising NNRTIs and NRTIs. Also disclosed are methods for making and using the compositions." The patent application was filed on Oct. 6, 2009 (12/587,405). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,367,098.PN.&OS=PN/8,367,098&RS=PN/8,367,098 Written by Kusum Sangma; edited by Anand Kumar.

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