Kovio Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Feb. 16 -- Kovio, San Jose, Calif., has been assigned a patent (8,372,194) developed by seven co-inventors for "methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions." The co-inventors are Fabio Zurcher, Brisbane, Calif., Wenzhuo Guo, Cupertino, Calif., Joerg Rockenberger, Redwood City, Calif., Vladimir K. Dioumaev, Mountain View, Calif., Brent Ridley, San Carlos, Calif., Klaus Kunze, Albuquerque, N.M., and James Montague Cleeves, Redwood City, Calif.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped "liquid silicon."."
The patent application was filed on Jan. 25, 2008 (12/020,481). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=83,72,194.PN.&OS=PN/83,72,194&RS=PN/83,72,194
Written by Amal Ahmed; edited by Jaya Anand.
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