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University of South Carolina Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Feb. 16 -- The University of South Carolina, Columbia, S.C., has been assigned a patent (8,372,697) developed by Asif Khan, Irmo, S.C., and Vinod Adivarahan, Columbia, S.C., for a "digital oxide deposition of SiO.sub.2 layers on wafers."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Novel silicon dioxide and silicon nitride deposition methods are generally disclosed. In one embodiment, the method includes depositing silicon on the surface of a substrate having a temperature of between about 65.degree. C. and about 350.degree. C. The heated substrate is exposed to a silicon source that is substantially free from an oxidizing agent. The silicon on the surface is then oxidized with an oxygen source that is substantially free from a silicon source. As a result of oxidizing the silicon, a silicon oxide layer forms on the surface of the substrate. Alternatively, or in additionally, a nitrogen source can be provided to produce silicon nitride on the surface of the substrate."
The patent application was filed on May 7, 2007 (11/800,712). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,372,697&OS=8,372,697&RS=8,372,697
Written by Satyaban Rath; edited by Hemanta Panigrahi.
SR0216HP0216-842870
(c) 2013 Targeted News Service
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