SanDisk 3D Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Feb. 16 -- SanDisk 3D, Milpitas, Calif., has been assigned a patent (8,372,740) developed by Huiwen Xu, Sunnyvale, Calif., Yung-Tin Chen, Santa Clara, Calif., and Steven J. Radigan, Fremont, Calif., for "methods for increased array feature density."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "The embodiments generally relate to methods of making semiconductor devices, and more particularly, to methods for making semiconductor pillar structures and increasing array feature pattern density using selective or directional gap fill. The technique has application to a variety of materials and can be applied to making monolithic two or three-dimensional memory arrays."
The patent application was filed on Feb. 6, 2012 (13/366,916). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,372,740&OS=8,372,740&RS=8,372,740
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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