Micron Technology Assigned Patent for Methods of Forming a Crystalline Pr.sub.1-xCa.sub.xMnO.sub.3 (PCMO) Material and Methods of Forming...
(Targeted News Service Via Acquire Media NewsEdge) Micron Technology Assigned Patent for Methods of Forming a Crystalline Pr.sub.1-xCa.sub.xMnO.sub.3 (PCMO) Material and Methods of Forming Semiconductor Device Structures Comprising Crystalline PCMO
By Targeted News Service
ALEXANDRIA, Va., Feb. 23 -- Micron Technology, Boise, Idaho, has been assigned a patent (8,377,718) developed by Bhaskar Srinivasan, Boise, Idaho, and Gurtej S. Sandhu, Boise, Idaho, for "methods of forming a crystalline Pr.sub.1-xCa.sub.xMnO.sub.3 (PCMO) material and methods of forming semiconductor device structures comprising crystalline PCMO."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of forming a crystalline Pr.sub.1-xCa.sub.xMnO.sub.3 (PCMO) material includes forming an amorphous PCMO material, crystallizing the amorphous PCMO material, and removing a portion of the crystalline PCMO material. A semiconductor structure including the crystalline PCMO material is also disclosed where the crystalline PCMO material has a thickness of less than about 50 nm. A method of forming a semiconductor device structure is also disclosed."
The patent application was filed on Nov. 10, 2010 (12/943,370). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,377,718&OS=8,377,718&RS=8,377,718
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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