International Business Machines Assigned Patent for Gate-all-around Nanowire Field Effect Transistors
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., March 1 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,384,065) developed by four co-inventors for "gate-all-around nanowire field effect transistors." The co-inventors are Sarunya Bangsaruntip, Yorktown Heights, N.Y., Josephine B. Chang, Yorktown Heights, N.Y., Guy M. Cohen, Yorktown Heights, N.Y., and Jeffrey W. Sleight, Yorktown Heights, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for forming a nanowire field effect transistor (FET) device, the method includes forming a suspended nanowire over a semiconductor substrate, forming a gate structure around a portion of the nanowire, forming a protective spacer adjacent to sidewalls of the gate and around portions of nanowire extending from the gate, removing exposed portions of the nanowire left unprotected by the spacer structure, and epitaxially growing a doped semiconductor material on exposed cross sections of the nanowire to form a source region and a drain region."
The patent application was filed on Dec. 4, 2009 (12/631,199). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=83,84,065.PN.&OS=PN/83,84,065&RS=PN/83,84,065
Written by Amal Ahmed; edited by Jaya Anand.
(c) 2013 Targeted News Service
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