Yale University Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., March 1 -- Yale University, New Haven, Conn., has been assigned a patent (8,384,156) developed by Tso-Ping Ma, Branford, Conn., Minjoo Lee, Hamden, Conn., and Xiao Sun, New Haven, Conn., for "complementary metal oxide semiconductor devices."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Improvements in Complementary Metal Oxide Semiconductor (CMOS) devices; in particular, field effect transistors (FETs) and devices using said transistors which are able to take advantage of the higher carrier mobility of electrons compared to holes by replacing the conventional p-channel transistor with an n-channel transistor having a double gate (or vice versa): Such a. Unipolar CMOS (U-CMOS) transistor can be realized by adapting the source and/or the drain such that when the body region undergoes inversion at a first surface current, is able to flow between the drain and the source and when the body region undergoes inversion at a second surface current is not able to flow between the drain and the source. Various logic gates may be constructed using U-CMOS transistors."
The patent application was filed on June 15, 2009 (12/996,067). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=83,84,156.PN.&OS=PN/83,84,156&RS=PN/83,84,156
Written by Amal Ahmed; edited by Jaya Anand.
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