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International Business Machines Assigned Patent for Borderless Contact for Ultra-thin Body Devices
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., March 2 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,383,490) developed by Su Chen Fan, Cohoes, N.Y., Balasubramanian S. Haran, Watervliet, N.Y., and David V. Horak, Essex Junction, Vt., for a "borderless contact for ultra-thin body devices."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "After formation of a semiconductor device on a semiconductor-on-insulator (SOI) layer, a first dielectric layer is formed over a recessed top surface of a shallow trench isolation structure. A second dielectric layer that can be etched selective to the first dielectric layer is deposited over the first dielectric layer. A contact via hole for a device component located in or on a top semiconductor layer is formed by an etch. During the etch, the second dielectric layer is removed selective to the first dielectric layer, thereby limiting overetch into the first dielectric layer. Due to the etch selectivity, a sufficient amount of the first dielectric layer is present between the bottom of the contact via hole and a bottom semiconductor layer, thus providing electrical isolation for the ETSOI device from the bottom semiconductor layer."
The patent application was filed on July 27, 2011 (13/191,540). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=83,83,490.PN.&OS=PN/83,83,490&RS=PN/83,83,490
Written by Kusum Sangma; edited by Anand Kumar.
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(c) 2013 Targeted News Service
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