Alpha and Omega Semiconductor Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., March 2 -- Alpha and Omega Semiconductor, Sunnyvale, Calif., has been assigned a patent (8,383,499) developed by TingGang Zhu, Cupertino, Calif., for a "method for forming gallium nitride semiconductor device with improved forward conduction."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for forming a gallium nitride based semiconductor diode includes forming Schottky contacts on the upper surface of mesas formed in a semiconductor body formed on a substrate. Ohmic contacts are formed on the lower surface of the semiconductor body. In one embodiment, an insulating layer is formed over the Schottky and ohmic contacts and vias are formed in the insulating layer to the Schottky and ohmic contacts to form the anode and cathode electrodes. In another embodiment, vias are formed in the insulating layer to the Schottky contacts and vias are formed in the semiconductor body to the ohmic contacts. An anode electrode is formed in electrical contact with the Schottky contacts. A cathode electrode is formed in electrical contact with the ohmic contacts on the backside of the substrate."
The patent application was filed on July 19, 2012 (13/553,237). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=83,83,499.PN.&OS=PN/83,83,499&RS=PN/83,83,499
Written by Kusum Sangma; edited by Anand Kumar.
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