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Enthone Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., March 8 -- Enthone, West Haven, Conn., has been assigned a patent (8,388,824) developed by four co-inventors for a "method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers." The co-inventors are Vincent Paneccasio Jr., Madison, Conn., Xuan Lin, Northford, Conn., Richard Hurtubise, Clinton, Conn., and Qingyun Chen, Branford, Conn.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for metallizing a via feature in a semiconductor integrated circuit device substrate, wherein the semiconductor integrated circuit device substrate comprises a front surface, a back surface, and the via feature and wherein the via feature comprises an opening in the front surface of the substrate, a sidewall extending from the front surface of the substrate inward, and a bottom. The method comprises contacting the semiconductor integrated circuit device substrate with an electrolytic copper deposition chemistry comprising (a) a source of copper ions and (b) a leveler compound, wherein the leveler compound is a reaction product of a dipyridyl compound and an alkylating agent; and supplying electrical current to the electrolytic deposition chemistry to deposit copper metal onto the bottom and sidewall of the via feature, thereby yielding a copper filled via feature."
The patent application was filed on Nov. 26, 2008 (12/324,335). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,388,824&OS=8,388,824&RS=8,388,824
Written by Arpi Sharma; edited by Anand Kumar.
AS0308AK0308-851804
(c) 2013 Targeted News Service
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