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Semiconductor Components Industries Assigned Patent for Electronic Device Including a Doped Region Disposed Under and Having a Higher Dopant...
(Targeted News Service Via Acquire Media NewsEdge) Semiconductor Components Industries Assigned Patent for Electronic Device Including a Doped Region Disposed Under and Having a Higher Dopant Concentration than a Channel Region and a Process of Forming the Same
By Targeted News Service
ALEXANDRIA, Va., March 9 -- Semiconductor Components Industries, Phoenix, has been assigned a patent (8,389,369) developed by Gary H. Loechelt, Tempe, Ariz., for an "electronic device including a doped region disposed under and having a higher dopant concentration than a channel region and a process of forming the same."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "An electronic device can include a drain region of a transistor, a channel region of the transistor, and a doped region that is disposed under substantially all of the channel region, is not disposed under substantially all of a heavily doped portion of the drain region, and has a higher dopant concentration compared to the channel region. A process of forming an electronic device can include forming a drain region, a channel region, and a doped region, wherein the drain region has a conductivity type opposite that of the channel and doped region. After forming the drain, channel, and doped regions, the doped region is disposed under substantially all of the channel region, the doped region is not disposed under substantially all of a heavily doped portion of the drain region, and the drain region is laterally closer to the doped region than to the channel region."
The patent application was filed on Feb. 8, 2010 (12/702,072). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,389,369&OS=8,389,369&RS=8,389,369
Written by Satyaban Rath; edited by Hemanta Panigrahi.
SR0309HP0309-852116
(c) 2013 Targeted News Service
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