Applied Materials Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., March 16 -- Applied Materials, Santa Clara, Calif., has been assigned a patent (8,394,196) developed by Yihwan Kim, Milpitas, Calif., for a "formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Methods for formation epitaxial layers containing silicon and carbon doped with phosphorus are disclosed. The pressure is maintained equal to or above 100 torr during deposition. The methods result in the formation of a film including substitutional carbon. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices."
The patent application was filed on Dec. 12, 2006 (11/609,826). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=83,94,196.PN.&OS=PN/83,94,196&RS=PN/83,94,196
Written by Amal Ahmed; edited by Jaya Anand.
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