International Business Machines, Freescale Semiconductor Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Aug. 17 -- International Business Machines, Armonk, N.Y., and Freescale Semiconductor, Austin, Texas, have been assigned a patent (8,507,187) developed by four co-inventors for "multi-exposure lithography employing a single anti-reflective coating layer." The co-inventors are Veeraraghavan S. Basker, Schenectady, N.Y., Willard E. Conley, Schenectady, N.Y., Steven J. Holmes, Guilderland, N.Y., and David V. Horak, Essex Junction, Vt.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A first photoresist is applied over an optically dense layer and lithographically patterned to form an array of first photoresist portions having a pitch near twice a minimum feature size. The pattern in the first photoresist portions, or a first pattern, is transferred into the ARC layer and partly into the optically dense layer. A second photoresist is applied and patterned into another array having a pitch near twice the minimum feature size and interlaced with the first pattern. The pattern in the second photoresist, or a second pattern, is transferred through the ARC portions and partly into the optically dense layer. The ARC portions are patterned with a composite pattern including the first pattern and the second pattern. The composite pattern is transferred through the optically dense layer and into the underlayer to form a sublithographic pattern in the underlayer."
The patent application was filed on July 9, 2008 (12/169,888). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=85,07,187.PN.&OS=PN/85,07,187&RS=PN/85,07,187
Written by Amal Ahmed; edited by Jaya Anand.
(c) 2013 Targeted News Service
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