International Business Machines Assigned Patent for Method of Forming a Semiconductor Device having a Cut-way Hole to Expose a Portion of a Hardmask...
(Targeted News Service Via Acquire Media NewsEdge) International Business Machines Assigned Patent for Method of Forming a Semiconductor Device having a Cut-way Hole to Expose a Portion of a Hardmask Layer
By Targeted News Service
ALEXANDRIA, Va., Aug. 19 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,507,346) developed by seven co-inventors for a "method of forming a semiconductor device having a cut-way hole to expose a portion of a hardmask layer." The co-inventors are Martin Burkhardt, White Plains, N.Y., Matthew E. Colburn, Schenectady, N.Y., Allen H. Gabor, Katonah, N.Y., Oleg Gluschenkov, Tannersville, N.Y., Scott D. Halle, Slingerlands, N.Y., Howard S. Landis, Underhill, Vt., and Helen Wang, LaGrangeville, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of forming a semiconductor device having a substrate, an active region and an inactive region includes: forming a hardmask layer over the substrate; transferring a first pattern into the hardmask layer in the active region of the semiconductor device; forming one or more fills in the inactive region; forming a cut-away hole within, covering, or partially covering, the one or more fills to expose a portion of the hardmask layer, the exposed portion being within the one or more fills; and exposing the hardmask layer to an etchant to divide the first pattern into a second pattern including at least two separate elements."
The patent application was filed on Nov. 18, 2010 (12/949,148). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,507,346.PN.&OS=PN/8,507,346&RS=PN/8,507,346
Written by Kusum Sangma; edited by Anand Kumar.
(c) 2013 Targeted News Service
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