U.S. Army Assigned Patent for Apparatus for Growth of Dilute-nitride Materials Using an Isotope for Enhancing the Sensitivity of Resonant Nuclear...
(Targeted News Service Via Acquire Media NewsEdge) U.S. Army Assigned Patent for Apparatus for Growth of Dilute-nitride Materials Using an Isotope for Enhancing the Sensitivity of Resonant Nuclear Reaction Analysis
By Targeted News Service
ALEXANDRIA, Va., Aug. 19 -- The U.S. Army has been assigned a patent (8,505,481) developed by Stefan P. Svensson, Columbia, Md., and John D. Demaree, Baltimore, for an "apparatus for growth of dilute-nitride materials using an isotope for enhancing the sensitivity of resonant nuclear reaction analysis."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "In certain desirable embodiments, the present invention relates to the use of .sup.15N isotopes into GaAsN, InAsN or GaSbN films for ion beam analysis. A semiconductor-nitride assembly for growing and analyzing crystal growth in a group III-V semiconductor sample that includes: a substrate; a buffer layer deposited on the substrate, a nitrogen gas injector to incorporate enriched nitrogen gas and the nitrogen gas injector includes a concentration of enriched nitrogen gas, a thin film consisting of at least one group III element containing compound where at least one group III element is covalently bonded with the nitrogen in the presence of the same or different group V element of the buffer layer, and a proton beam to analyze the incorporation of the nitrogen gas in the thin film layer is described."
The patent application was filed on June 1, 2012 (13/486,168). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,505,481&OS=8,505,481&RS=8,505,481
Written by Satyaban Rath; edited by Hemanta Panigrahi.
(c) 2013 Targeted News Service
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