International Business Machines, JSR Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Aug. 24 -- International Business Machines, Armonk, N.Y., and JSR, Tokyo, have been assigned a patent (8,513,127) developed by 13 co-inventors for a "chemical mechanical planarization processes for fabrication of FinFET devices." The co-inventors are Josephine B. Chang, Bedford Hills, N.Y., Leslie Charns, San Jose, Calif., Jason E. Cummings, Smithfield, N.C., Michael A. Guillorn, Yorktown Heights, N.Y., Lukasz J. Hupka, Croton-on-Hudson, N.Y., Dinesh R. Koli, Tarrytown, N.Y., Tomohisa Konno, Mie, Japan, Mahadevaiyer Krishnan, Hopewell Junction, N.Y., Michael F. Lofaro, Danbury, Conn., Jakub W. Nalaskowski, Yorktown Heights, N.Y., Masahiro Noda, Mie, Japan, Dinesh K. Penigalapati, Tarrytown, N.Y., and Tatsuya Yamanaka, Mie, Japan.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying layers of a second material and a third material such that a selectivity of the top layer material to the second material to the third material is between about 1:1:1 to about 2:1:1 to provide a planar topography."
The patent application was filed on Jan. 25, 2011 (13/012,836). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,513,127.PN.&OS=PN/8,513,127&RS=PN/8,513,127
Written by Kusum Sangma; edited by Anand Kumar.
(c) 2013 Targeted News Service
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