Applied Materials Assigned Patent for Planarizing Etch Hardmask to Increase Pattern Density and Aspect Ratio
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Aug. 24 -- Applied Materials, Santa Clara, Calif., has been assigned a patent (8,513,129) developed by five co-inventors for a "planarizing etch hardmask to increase pattern density and aspect ratio." The co-inventors are Martin Jay Seamons, San Jose, Calif., Kwangduk Douglas Lee, Redwood City, Calif., Chiu Chan, Foster City, Calif., Patrick Reilly, San Jose, Calif., and Sudha Rathi, San Jose, Calif.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Methods for manufacturing a semiconductor device are provided. In one embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and has a first set of interconnect features. The first film stack comprises a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer. The first photoresist layer is patterned by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features."
The patent application was filed on May 28, 2010 (12/790,203). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,513,129.PN.&OS=PN/8,513,129&RS=PN/8,513,129
Written by Kusum Sangma; edited by Anand Kumar.
(c) 2013 Targeted News Service
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