International Business Machines Assigned Patent for Method and Structure for Differential Silicide and Recessed or Raised Source/Drain to Improve...
(Targeted News Service Via Acquire Media NewsEdge) International Business Machines Assigned Patent for Method and Structure for Differential Silicide and Recessed or Raised Source/Drain to Improve Field Effect Transistor
By Targeted News Service
ALEXANDRIA, Va., Aug. 24 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,513,122) developed by Christian Lavoie, Pleasantville, N.Y., Viorel C. Ontalus, Danbury, Conn., and Ahmet S. Ozcan, Pleasantville, N.Y., for a "method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method forms an integrated circuit structure. The method patterns a protective layer over a first-type field effect transistor and removes a stress liner from above a second-type field effect transistors. Then, the method removes a first-type silicide layer from source and drain regions of the second-type field effect transistor, but leaves at least a portion of the first-type silicide layer on the gate conductor of the second-type field effect transistor. The method forms a second-type silicide layer on the gate conductor and the source and drain regions of the second-type field effect transistor. The second-type silicide layer that is formed is different than the first-type silicide layer. For example, the first-type silicide layer and the second-type silicide layer can comprise different materials, different thicknesses, different crystal orientations, and/or different chemical phases, etc."
The patent application was filed on Feb. 5, 2013 (13/759,146). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,513,122.PN.&OS=PN/8,513,122&RS=PN/8,513,122
Written by Kusum Sangma; edited by Anand Kumar.
(c) 2013 Targeted News Service
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