Corning, SOI TEC Silicon on Insulator Technologies Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Aug. 30 -- Corning, Corning, N.Y., and SOI TEC Silicon on Insulator Technologies, Bernin, France, have been assigned a patent (8,518,799) developed by five co-inventors for a "process of making semiconductor on glass substrates with a stiffening layer." The co-inventors are Nadia Ben Mohamed, Echirolles, France, Ta-Ko Chuang, Painted Post, N.Y., Jeffrey Scott Cites, Horseheads, N.Y., Daniel Delprat, Crolles, France, and Alex Usenko, Painted Post, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A process of making semiconductor-on-glass substrates having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer between the silicon film and the glass in an ion implantation thin film transfer process by depositing a stiffening layer or layers on one of the donor wafer or the glass substrate in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film."
The patent application was filed on Dec. 14, 2012 (13/714,792). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=85,18,799.PN.&OS=PN/85,18,799&RS=PN/85,18,799
Written by Amal Ahmed; edited by Jaya Anand.
(c) 2013 Targeted News Service
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