International Business Machines Assigned Patent for Radiation Hardened SOI Structure and Method of Making Same
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Aug. 30 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,518,807) developed by five co-inventors for a "radiation hardened SOI structure and method of making same." The co-inventors are Stephen W. Bedell, Wappingers Falls, N.Y., Bahman Hekmatshoartabari, White Plains, N.Y., Ali Khakifirooz, Mountain View, Calif., Ghavam G. Shahidi, Round Ridge, N.Y., and Davood Shahrjerdi, White Plains, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "An SOI substrate including a buried insulator layer positioned between a base substrate and a top semiconductor active layer is first provided. A semiconductor device can then be formed on and/or within a portion of the top semiconductor active layer. A bottommost surface of the buried insulator layer which is opposite a topmost surface of the buried insulator layer that forms an interface with the top semiconductor active layer can be then exposed. Ions can then be implanted through the bottommost surface of the buried insulator layer and into a portion of the buried insulator layer. The ions are implanted at energy ranges that do not disturb the buried insulator layer/top semiconductor active layer interface, while leaving a relatively thin portion of the buried insulator layer near the buried insulator layer/top semiconductor active layer interface intact."
The patent application was filed on June 22, 2012 (13/530,637). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=85,18,807.PN.&OS=PN/85,18,807&RS=PN/85,18,807
Written by Amal Ahmed; edited by Jaya Anand.
(c) 2013 Targeted News Service
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