Freescale Semiconductor Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Aug. 30 -- Freescale Semiconductor, Austin, Texas, has been assigned a patent (8,518,764) developed by four co-inventors for a "semiconductor structure having a through substrate via (TSV) and method for forming." The co-inventors are Thuy B. Dao, Austin, Texas, Joel E. Keys, Austin, Texas, Hernan A. Rueda, Chandler, Ariz., and Paul W. Sanders, Scottsdale, Ariz.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor device structure includes a substrate having a background doping of a first concentration and of a first conductivity type. A through substrate via (TSV) is through the substrate. A device has a first doped region of a second conductivity on a first side of the substrate. A second doped region is around the TSV. The second doped region has a doping of a second concentration greater than the first concentration and is of the first conductivity type."
The patent application was filed on Oct. 24, 2011 (13/279,776). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=85,18,764.PN.&OS=PN/85,18,764&RS=PN/85,18,764
Written by Amal Ahmed; edited by Jaya Anand.
(c) 2013 Targeted News Service
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