International Business Machines Assigned Patent for Structure and Process for Metal Fill in Replacement Metal Gate Integration
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Aug. 31 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,519,454) developed by four co-inventors for a "structure and process for metal fill in replacement metal gate integration." The co-inventors are Dechao Guo, Fishkill, N.Y., Shu-Jen Han, Cortlandt Manor, N.Y., Keith Kwong Hon Wong, Wappingers Falls, N.Y., and Jun Yuan, Fishkill, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Processes for metal fill in replacement metal gate integration schemes and resultant devices are provided herein. The method includes forming a dummy gate on a semiconductor substrate. The dummy gate includes forming a metal layer between a first material and a second material. The method further includes partially removing the dummy gate to form an opening bounded by a spacer material. The method further includes forming a recess in the spacer material to widen a portion of the opening. The method further includes removing a remaining portion of the dummy gate through the opening to form a trench having the recess forming an upper portion thereof. The method further includes filling the trench and the recess with a replacement metal gate stack."
The patent application was filed on March 30, 2011 (13/075,443). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=85,19,454.PN.&OS=PN/85,19,454&RS=PN/85,19,454
Written by Deviprasad Jena; edited by Jaya Anand.
(c) 2013 Targeted News Service
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