IXYS unveils SS150 and SS275 high power SiC diodes
Sep 02, 2013 (MarketLine via COMTEX) --
IXYS Corporation, a provider of power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, has introduced SS150 and SS275 series high power silicon carbide, or SiC, diodes.
Three diode configurations provide designers with flexible connection and layout options. Packaged in our low inductance, surface mount DE Series package, these products provide excellent switching performance. The SS150 and SS275 are both available in 600V, 10A and 1200V, 5A ratings. Standard internal configurations include TI Triple Independent; TA Triple Anode; and TC Triple Cathode, the company said.
The SS150 and SS275 High Power SiC Diode Modules are ideal for applications such as MHz switch mode power supplies; high frequency converters; resonant converters; and rectifier circuits. The use of Silicon Carbide allows extremely fast switching, high frequency operation, with zero recovery and temperature independent behavior. Coupled with our low inductance RF package, these diodes can be utilized in any number of fast switching diode circuits or high frequency converter applications, the company added.
SS150 & SS275 features includes surface mount package; zero reverse recovery; zero forward recovery; high frequency operation; temperature independent behavior; low inductance ; and positive temperature coefficient for Vf.
"The SS150 and SS275 High Power SiC Diode Modules allow designers more flexible design options with high frequency applications," commented Stephen Krausse, General Manager of IXYS Colorado.
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