Infineon Technologies Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Sept. 11 -- Infineon Technologies, Neubiberg, Germany, has been assigned a patent (8,530,355) developed by Jiang Yan, Newburgh, N.Y., Danny Pak-Chum Shum, Poughkeepsie, N.Y., and Armin Tilke, Beacon, N.Y., for a "mixed orientation semiconductor device and method."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of making a semiconductor device begins with a semiconductor wafer that includes a first semiconductor layer overlying a second semiconductor layer. A first trench is etched in the semiconductor wafer. The first trench is filled with insulating material. A second trench is etched within the first trench and through the insulating material, such that insulating material remains along sidewalls of the first trench. The second trench exposes a portion of the second insulating layer. A semiconductor layer can then be grown within the second trench using the second semiconductor layer as a seed layer."
The patent application was filed on Dec. 23, 2005 (11/317,737). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=85,30,355.PN.&OS=PN/85,30,355&RS=PN/85,30,355
Written by Deviprasad Jena; edited by Jaya Anand.
(c) 2013 Targeted News Service
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