Institute of Microelectronics of Chinese Academy of Sciences Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Sept. 11 -- Institute of Microelectronics of Chinese Academy of Sciences, Beijing, has been assigned a patent (8,530,328) developed by Haizhou Yin, Poughkeepsie, N.Y., and Wei Jiang, Beijing, for a "method for manufacturing semiconductor device."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention discloses a method for manufacturing a semiconductor device, comprising: forming a first shallow trench isolation in a substrate; forming a semiconductor device structure in an active region surrounded by the first shallow trench isolation; removing the first shallow trench isolation and leaving a shallow trench in the substrate; and filling the shallow trench with an insulating material to form a second shallow trench isolation. In the method for manufacturing the semiconductor device according to the present invention, after forming the shallow trench isolation with high stress, the high stress is memorized by the gate to enhance the stress in the channel region by etching, removing, and then backfilling the shallow trench isolation, so that the carrier mobility in the channel regions to be formed later can be increased and the device performance can be improved."
The patent application was filed on May 26, 2012 (13/512,326). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=85,30,328.PN.&OS=PN/85,30,328&RS=PN/85,30,328
Written by Deviprasad Jena; edited by Jaya Anand.
(c) 2013 Targeted News Service
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