Applied Materials Assigned Patent for Method of Improving Oxide Growth Rate of Selective Oxidation Processes
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Oct. 7 -- Applied Materials, Santa Clara, Calif., has been assigned a patent (8,546,271) developed by four co-inventors for a "method of improving oxide growth rate of selective oxidation processes." The co-inventors are Yoshitaka Yokota, San Jose, Calif., Norman Tam, San Jose, Calif., Balasubramanian Ramachandran, Santa Clara, Calif., and Martin John Ripley, San Jose, Calif.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized."
The patent application was filed on May 27, 2011 (13/117,931). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8546271.PN.&OS=PN/8546271&RS=PN/8546271
Written by Sudarshan Harpal; edited by Jaya Anand.
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