Micron Technology Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Oct. 7 -- Micron Technology, Boise, Idaho, has been assigned a patent (8,546,231) developed by Fabio Pellizzer, Cornate D'Adda, Italy, Roberto Bez, Milan, Italy, and Lorenzo Fratin, Buccinasco, Italy, for "memory arrays and methods of forming memory cells."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Some embodiments include methods of forming memory cells. A stack includes ovonic material over an electrically conductive region. The stack is patterned into rails that extend along a first direction. The rails are patterned into pillars. Electrically conductive lines are formed over the ovonic material. The electrically conductive lines extend along a second direction that intersects the first direction. The electrically conductive lines interconnect the pillars along the second direction. Some embodiments include a memory array having first electrically conductive lines extending along a first direction. The lines contain n-type doped regions of semiconductor material. Pillars are over the first conductive lines and contain mesas of the n-type doped regions together with p-type doped regions and ovonic material. Second electrically conductive lines are over the ovonic material and extend along a second direction that intersects the first direction. The second electrically conductive lines interconnect the pillars along the second direction."
The patent application was filed on Nov. 17, 2011 (13/298,962). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8546231.PN.&OS=PN/8546231&RS=PN/8546231
Written by Sudarshan Harpal; edited by Jaya Anand.
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