Freescale Semiconductor Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Oct. 7 -- Freescale Semiconductor, Austin, Texas, has been assigned a patent (8,546,229) developed by Xin Lin, Phoenix, Daniel J. Blomberg, Chandler, Ariz., and Jiang-Kai Zuo, Chandler, Ariz., for "methods for fabricating bipolar transistors with improved gain."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Insufficient gain in bipolar transistors (20) is improved by providing an alloyed (e.g., silicided) emitter contact (452) smaller than the overall emitter (42) area. The improved emitter (42) has a first emitter (FE) portion (42-1) of a first dopant concentration C.sub.FE, and a second emitter (SE) portion (42-2) of a second dopant concentration C.sub.SE. Preferably C.sub.SE.gtoreq.C.sub.FE. The SE portion (42-2) desirably comprises multiple sub-regions (45i, 45j, 45k) mixed with multiple sub-regions (47m, 47n, 47p) of the FE portion (42-1). A semiconductor-metal alloy or compound (e.g., a silicide) is desirably used for Ohmic contact (452) to the SE portion (42-2) but substantially not to the FE portion (42-1). Including the FE portion (42-1) electrically coupled to the SE portion (42-2) but not substantially contacting the emitter contact (452) on the SE portion (42-2) provides gain increases of as much as .about.278."
The patent application was filed on Feb. 6, 2013 (13/760,882). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8546229.PN.&OS=PN/8546229&RS=PN/8546229
Written by Sudarshan Harpal; edited by Jaya Anand.
(c) 2013 Targeted News Service
[ Back To Technology News's Homepage ]